HL6340MG/41mg circular beam low operating current ode-208-1437d (z) rev.4 mar. 2005 description the HL6340MG/41mg are 0.63 m band algainp laser diodes can be operated with low operating current. these products were designed by self aligned refrac tive index (sri) active layer structure. these are suitable as a light source for laser levelers, laser scanners and optical equipment for measurement. application ? laser leveler ? laser scanner ? measurement features ? optical output power : 5 mw cw ? single longitudinal mode ? visible light power : 635 nm typ ? low operating current : 25 ma typ ? low aspect ratio : 1.2 typ ? operating temperature : +50c ? tm mode oscillation ld pd 1 3 internal circuit ? HL6340MG package type ? HL6340MG/41mg: mg 2 ld pd 1 3 internal circuit ? hl6341mg 2
HL6340MG/41mg rev.4, mar. 2005, page 2 of 9 absolute maximum ratings (t c = 25c) item symbol value unit optical output power p o 5 mw pulse optical output power p o(pulse) 6 * mw ld reverse voltage v r(ld) 2 v pd reverse voltage v r(pd) 30 v operating temperature topr ?10 to +50 c storage temperature tstg ?40 to +85 c note: pulse condition : pulse width 1 s, duty = 50 % optical and electrical characteristics (t c = 25c) item symbol min typ max unit test condition optical output power p o 5 ? ? mw ? threshold current ith ? 20 30 ma ? slope efficiency s 0.5 0.8 1.1 mw/ma 3 (mw) / (i (4mw) ? i (1mw) ) operating current i op ? 25 40 ma p o = 5 mw operating voltage v op ? 2.4 2.7 v p o = 5 mw lasing wavelength p 630 635 640 nm p o = 5 mw beam divergence parallel to the junction // 13 17 25 deg. p o = 5 mw beam divergence perpendicular to the junction ? 16 20 25 deg. p o = 5 mw aspect ratio ? / // ? 1.2 1.5 ? p o = 5 mw monitor current i s 0.01 0.03 0.06 ma p o = 5 mw, v r(pd) = 5 v notes: 1. care must be taken in laser diodes h andling to prevent optical damage caused by forward surges as well as by esd. 2. the wavefront performance is not guaranteed. 3. the beam has 12 deg offset against the pack age reference plane. please take account it mounted on a board.
HL6340MG/41mg rev.4, mar. 2005, page 3 of 9 typical characteristic curves slope efficiency vs. the case temperature case temperature, t c (?c) ?0 0 50 40 30 20 10 ?0 0 50 40 30 20 10 slope efficiency, s (mw/ma) 0 0.2 0.4 0.6 1.0 1.4 optical output power, p o (mw) monitor current, i s (ma) 0.10 0.08 0.06 0.04 0.02 04 2 135 0 monitor current vs. optical output power 100 50 threshold current, ith (ma) threshold current vs. the case temperature 20 case temperature, t c (?c) v r(pd) = 5v t c = 25?c optical output power, p o (mw) 5 4 3 2 1 0 0 forward current, i f (ma) optical output power vs. forward current 60 30 10 20 40 50 50?c 1.2 0.8 10 25?c 40?c t c = 10?c
HL6340MG/41mg rev.4, mar. 2005, page 4 of 9 monitor corrent vs. the case temperature 100 10203040 monitor current, i s (ma) 0 0.02 0.03 0.04 0.05 50 case temperature, t c (?c) lasing wavelength vs. the case temperature lasing wavelength, p (nm) 625 630 640 645 635 100 1020304050 case temperature, t c (?c) p o = 5mw v r = 5v p o = 5mw 0.01 4 3 2 1 0 01 3 245 astigmatism vs. optical output power 5 0.2 0.4 0.6 0.8 1.0 ?0 ?0 ?0 ?0 0 40 30 20 10 angle, (deg.) relative intensity 0 far field pattern optical output power, p o (mw) p o = 5mw t c = 25?c t c = 25?c na = 0.55 astigmatism, a s ( m) parallel perpendicular
HL6340MG/41mg rev.4, mar. 2005, page 5 of 9 100 80 60 40 20 0 survival rate (%) applied voltage (kv) 0 0.5 1.0 1.5 0 200 100 300 100 80 60 survival rate (%) 40 20 0 applied voltage (v) electrostatic destruction forward (c : 100pf, r : 1.5k ? ) n=10pcs ? i o 10% judgment revarse (c : 100pf, r : 1.5k ? ) n=10pcs ? i o 10% judgment electrostatic destruction
HL6340MG/41mg rev.4, mar. 2005, page 6 of 9 package dimensions opj code jedec jeita mass (reference value) ld/mg ? ? 0.3 g unit: mm 1 2 3 5.6 +0 ?0.025 1.0 0.1 (0.4) (90 o ) 1.6 0.2 0.4 +0.1 ?0 4.1 0.3 3.55 0.1 0.25 glass 1.27 3 ? 0.45 0.1 6.5 1.0 1.2 0.1 2.3 0.2 1 2 3 2.0 0.2 emitting point 12 * 1 12 * 1 the beam has 12 deg offset against the package reference plane. please take account it mounted on a board. note: 1.
HL6340MG/41mg rev.4, mar. 2005, page 7 of 9 the cautions on the handing of HL6340MG/41mg as laser diode differ from silicon devices, the area of safe operation (aso) of laser diodes is not decided by power consumption alone, but optical output must be considered from view point of optical damage. these products are more sensitive to static electricity or an surge current than the conventional product. the following is test data of esd (el ectric static damage). the operating condition should be within 5 mw and the working please should be keep small static electri city level such as 20 v less and small surge current such as 40 ma less from out. n = 5 r = 0 c = 200pf forward : HL6340MG : hl6312g 100 0 20 40 60 80 0 200 400 applied voltage v cc (v) 1. electrostatic destructive examination data survival rate (%) 100 0 20 40 60 80 survival rate (%) 100 0 20 40 60 80 survival rate (%) 100 0 20 40 60 80 survival rate (%) 600 800 0 0.5 1.0 1.5 applied voltage v cc (kv) 2.5 2.0 3.0 0 0.5 1.0 1.5 applied voltage v cc (kv) 2.5 2.0 3.0 0 204060 applied voltage v cc (v) 100 80 120 n = 5 r = 1.5k ? c = 100pf forward n = 5 r = 1.5k ? c = 100pf reverse step stress test (5 times/voltage) failure criteria ? i op 10% v cc c dut r n = 5 r = 0 c = 200pf reverse
HL6340MG/41mg rev.4, mar. 2005, page 8 of 9 600 10 100 200 300 400 500 applied voltage, v cc (v) 0 0.002 0.004 capacitance, c o ( f) 0.008 0.006 0.010 r = 1.5k ? , c = 100pf r = 0, c = 200pf step stress tast (5 times/voltage) failure criteria ? i op 10% v cc cc o dut r r o = 2.2k ? 2. clamp capacitance vs. esd of HL6340MG/41mg 120 100 0 20 40 60 80 distribution of i op (ma) applied current, i f (ma) 10 100 1m 100m 10m 1 applied puls width, p w (s) t c = 25 c 1 shot n = 10pcs 3. applied puls width vs. applied current i f p w 6 7 5 0 1 2 3 4 n (pcs) 01020 4050 30 60 destructive optical output power, p cod (mw) 4. catastrophic optical damage of HL6340MG/41mg
HL6340MG/41mg rev.4, mar. 2005, page 9 of 9 cautions 1. opnext japan,inc.(opj) neither warrants nor grants licenses of any our rights or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. opj bears no responsibility for problems that may aris e with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standa rds or specifications before fi nal design, purchase or use. 3. opj makes every attempt to ensure that its pr oducts are of high quality and reliability. however, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction ma y directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by opj particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. opj bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges , consider normally foreseeable failure rates or failure modes in semiconductor devices and employ sy stemic measures such as fail-safes, so that the equipment incorporating opj product does not cause bodily injury, fire or other consequential damage due to operation of the opj product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in an y form, the whole or part of this document without written approval from opj. 7. contact our sales office for any questions regarding this document or opj products. 1. the laser light is harmful to human body especially to eye no matter what directly or indirectly. the laser beam shall be observed or adjusted through infrared camera or equivalent. 2. this product contains gallium arsenide (gaas), whic h may seriously endanger your health even at very low doses. please avoid treatment which may creat e gaas powder or gas, such as disassembly or performing chemical experiments, when you handle the product. when disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. definition of items shown in this cas is in accordance with that shown in opto device databook issued by opj unless otherwise specified. sales offices device business unit opnext japan, inc. 190 kashiwagi, komoro-shi, nagano 384-8511, japan tel: (0267) 22-4111 for the detail of opnext, inc., see the following homepage: ?2005 opnext japan, inc., all rights reserved. printed in japan. colophon 1.0 japan (japanese) http://www.opnext.com/jp/products/ other area (english) http://www.opnext.com/products/
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